According to the American Physicists Organization Network, a research team led by Andrew Flovitt of the Department of Engineering at the University of Cambridge in the United Kingdom has developed a new type of hafnium oxide with a higher dielectric constant, which is expected to be used to manufacture the next generation of smaller electronic devices , Photovoltaic equipment and more efficient solar cells. At present, hafnium oxide has become a key material in the electronics industry.
The application range of metal oxides such as hafnium oxide is very wide. Normally, they are generally manufactured on the base by spraying. However, when scientists tried to manufacture high-quality electronic materials by sputtering, they encountered a problem that it was difficult to accurately control the energy situation of the deposition process and the properties of the materials. To this end, the Flovitt team used the novel deposition technology developed by Plasma Exploration Ltd. in the United Kingdom-using high target sputtering (HiTUS) to promote plasma sputtering.
Hafnium oxide is an electrical insulator that can be used to make optical coatings, capacitors, and transistors. Because the dielectric constant of hafnium oxide (the ratio between the electric displacement and the electric field density that produces electric displacement) is relatively high, and the higher the dielectric constant of the material, the stronger its ability to store charge, that is, the larger the capacitance, some The company is currently replacing silicon dioxide in transistors with hafnium oxide.
Hafnium oxide can appear in different amorphous and polycrystalline structures. However, the amorphous structure lacks the grain boundary existing in the polycrystalline structure (in a polycrystalline material, the point where the two crystals meet is the grain boundary), so it is better than the polycrystalline structure. The grain boundary is like a conductive path, which not only makes the resistivity smaller, but also causes uneven conductivity in a large area of ​​the device, which can cause the performance of the device to become uneven. However, to date, the dielectric constant of amorphous hafnium oxide has been relatively low, only about 20, and the dielectric constant of the new hafnium oxide developed by the Flovitt team is higher than 30.
Flovitt said that compared to other forms, the properties of non-crystalline dielectrics (including hafnium oxide) are more uniform, and the absence of grain boundaries also makes the material more resistive and has lower photon scattering.
At room temperature, the researchers used the rapid deposition process to create new materials, which makes them particularly suitable for the manufacture of organic electronic devices, large-capacity semiconductors, etc. The absence of grain boundaries also makes this material an ideal material for manufacturing optical coatings and high-efficiency solar equipment.
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